Perovskite transistor memories for neuromorphic intelligent applications. In the era of big data, efficient in-memory computing overcomes traditional computing architecture bottlenecks. Inspired by ne

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Perovskite transistor memories for neuromorphic intelligent applications. In the era of big data, efficient in-memory computing overcomes traditional computing architecture bottlenecks. Inspired by neural networks, artificial synaptic memory, or non-volatile memory, in the form of floating-gate field-effect transistor (FG-FET) holds great promise. Metal halide perovskite FG-FETs offer cost-effective, energy-efficient solutions, especially for flexible and wearable devices and offer additional photo-memory capability for image recognition. This project aims to discover lead-free perovskites with reduced dimensional structure to enhance charge mobility and photosensitivity for non-volatile memory. The anticipated outcome is the first demonstration of perovskite transistors in synaptic floating-gate memories.. Scheme: Discovery Projects. Field: 4016 - Materials Engineering. Lead: Prof Anita Ho-Baillie