Ultrathin III-V Solar Cells via Crack-Assisted Layer Exfoliation. III-V semiconductors are excellent photovoltaic materials with highest demonstrated solar-to-electricity conversion efficiencies, but

Description

Ultrathin III-V Solar Cells via Crack-Assisted Layer Exfoliation. III-V semiconductors are excellent photovoltaic materials with highest demonstrated solar-to-electricity conversion efficiencies, but find limited usage in terrestrial applications due to high material and fabrication costs. This project aims to improve the cost-effectiveness of III-V solar cells by developing ultrathin III-V semiconductors via crack-assisted layer transfer approach and epitaxy-free fabrication via heterojunction architectures, paving the way for cost-effective, high-efficiency, flexible solar cells. The expected outcomes include a disruptive technology for integrated photovoltaics, novel contact and passivation materials, as well as new knowledge generated in materials science and optoelectronics disciplines.. Scheme: Discovery Projects. Field: 0912 - Materials Engineering. Lead: Prof Chennupati Jagadish